| PART |
Description |
Maker |
| 1N113 1N100 1N68 1N107 1N128 1N270JTXV 1N143 1502B |
100 V, 60 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
10 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES
12 V, 500 mA, gold bonded germanium diode
50 V, 500 mA, gold bonded germanium diode
75 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
125 V, 500 mA, gold bonded germanium diode
85 V, 500 mA, gold bonded germanium diode
30 V, 500 mA, gold bonded germanium diode
40 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC
BKC International Electronics
List of Unclassifed Man...
|
| 2SK1228TMG MA3027-LH MA3027TSK MA3150-LTMG MA3360- |
100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2.7 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
0.1 A, SILICON, SIGNAL DIODE
SILICON, PIN DIODE
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
0.035 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
PANASONIC CORP
|
| 1N2282 1N1185A 1N1612 1N3055 1N4510 1N3573R 1N1581 |
35 A, 300 V, SILICON, RECTIFIER DIODE, DO-5
40 A, 150 V, SILICON, RECTIFIER DIODE, DO-5
5 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
0.125 A, SILICON, SIGNAL DIODE
12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
3.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-4
3 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
1 A, 400 V, SILICON, SIGNAL DIODE, DO-4
1 A, 200 V, SILICON, SIGNAL DIODE, DO-4
0.8 A, SILICON, SIGNAL DIODE
35 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
275 A, 150 V, SILICON, RECTIFIER DIODE, DO-9
|
|
| OA79 |
Germanium Diode
|
ETC
|
| OA95/05 |
Diode Germanium
|
ETC
|
| G1607 |
GERMANIUM DIODE
|
BKC
|
| SF18 SF12-AP SF12-BP SF14-AP SF16-AP |
1.0 Amp Super Fast Recovery Rectifiers 50 to 600 Volts
1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
1 A, 200 V, SILICON, SIGNAL DIODE, DO-41
1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
|
Micro Commercial Components
|
| 1N457 1N457AT50R 1N457T50R 1N457ATR 1N457TR |
High Conductance Low Leakage Diode; Package: DO-35; No of Pins: 2; Container: Bulk 0.2 A, 70 V, SILICON, SIGNAL DIODE, DO-35
Small Signal Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| SF4001 |
DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
|
Vishay Semiconductors
|
| 1N4150-1 JANTXV1N4150-1 |
Signal or Computer Diode; Package: DO-35; IO (A): 0.2; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.74; IR (µA): 0.1; 0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-35
SWITCHING DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| OA95 |
Gold Bonded Germanium Diode
|
BKC Semiconductors
|
|
